Semiconductor device and fabricating method thereof

ABSTRACT

A method of fabricating a semiconductor device includes forming a fin structure on a substrate, forming a channel layer on a sidewall and a top surface of the fin structure, and forming a gate stack over the channel layer. The channel layer includes a two-dimensional (2D) material. The gate stack includes a ferroelectric layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional application of U.S. patent applicationSer. No. 15/904,699, filed Feb. 26, 2018, now U.S. Pat. No. 10,490,631,issued Nov. 26, 2019, which claims priority to U.S. ProvisionalApplication Ser. No. 62/590,396, filed Nov. 24, 2017, which are hereinincorporated by reference in their entirety.

BACKGROUND

Semiconductor devices are used in a variety of electronic applicationssuch as, for example, personal computers, cell phones and otherelectronic equipment. Transistors are circuit components or elementsthat are often formed on semiconductor devices. With the progress oftransistor process technology, the dimension of transistors continues toshrink and therefore the number of transistors per unit area of anintegrated circuit has increased accordingly.

Methods of fabrication of field effect transistor (FET) devices may beincapable of controlling the layer thickness and interface compositionwith atomic precision. For example, the physical limitation (i.e. 60mV/decade) restricts the subthreshold swing, making complementarymetal-oxide-semiconductor (CMOS) voltage and transistor powerdissipation not be downscaled arbitrarily.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flowchart of a method of fabricating a semiconductor device,in accordance with some embodiments.

FIGS. 2A to 20D illustrate a method of fabricating a semiconductordevice at various stages in accordance with some embodiments.

FIG. 21 is an enlarged view of area M of FIG. 20D.

FIG. 22 is an enlarged view of area N of FIG. 20C.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

FIG. 1 is an exemplarily process flow chart 100 for fabricating asemiconductor device, according to one or more embodiments of thepresent disclosure. The method includes operation 101 in which a finstructure is formed on a semiconductor substrate. The method continueswith operation 103 in which a passivation layer is formed on the finstructure. Subsequently, operation 105, a channel layer is formed on thepassivation layer. The method continues with operation 107 in which adielectric layer is formed on the channel layer. The method continueswith operation 109 in which a cap layer is formed on the dielectriclayer. Next, operation 111, an annealing process is performed. Themethod continues with operation 113in which a semiconductor gate isformed on the cap layer. In operation 115 the semiconductor gate ispatterned to form a gate stack with the annealed dielectric layer andthe annealed cap layer. It is understood that additional operations maybe provided before, during, and after the operations shown by FIG. 1,and some of the operations described below can be replaced or eliminatedfor additional embodiments of the method. The order of theoperations/processes may be interchangeable.

FIGS. 2A to 20D illustrate a method of fabricating a semiconductordevice at various stages in accordance with some embodiments of thepresent disclosure. FIGS. 2A through 22 are respectively perspective andcross-sectional views of various intermediary stages in manufacturing ofthe semiconductor device in accordance with various embodiments. InFIGS. 2A through 22, figures ending with an “A” designation areillustrated a perspective view of the semiconductor device, figures witha B designation are illustrated along a similar cross-section B-B′,figures ending with a “C” designation are illustrated along a similarcross-section C-C′, and figures ending with a “D” designation areillustrated along a similar cross-section D-D′. In some embodiments, thesemiconductor device shown in FIGS. 2A to 20D may be intermediatedevices fabricated during processing of an integrated circuit (IC), or aportion thereof, that may include static random access memory (SRAM),logic circuits, passive components, such as resistors, capacitors, andinductors, and/or active components, such as p-type field effecttransistors (PFETs), n-type FETs (NFETs), multi-gate FETs, metal-oxidesemiconductor field effect transistors (MOSFETs), complementarymetal-oxide semiconductor (CMOS) transistors, bipolar transistors, highvoltage transistors, high frequency transistors, other memory cells, andcombinations thereof.

Referring to FIGS. 2A to 2C. A semiconductor substrate 201 is provided.In some embodiments, the semiconductor substrate 201 may include anelementary semiconductor including silicon or germanium in acrystalline, a polycrystalline, or an amorphous structure. In someembodiments, the semiconductor substrate 201 may include an alloysemiconductor including SiGe, GeSn, SiGeSn, III-V alloys and/or anyother suitable material, or combinations thereof. In some embodiments,the semiconductor substrate 201 includes a single layer having athickness in a range from about 30 to about 100 nm. In some embodiments,the semiconductor substrate 201 includes a multilayered structure, andat least one of the layers has a thickness in a range from about 3 toabout 10 nm. In some embodiments, the semiconductor substrate 201 may bestrain relaxed buffer (SRB) layer.

In FIGS. 3A to 3C, a fin structure 213 is formed over the semiconductorsubstrate 201 (operation 101 of FIG. 1). Specifically, a patterned masklayer 205 (may be a hard mask layer) is formed over the top surface ofthe substrate 201. The mask layer 205 maintains the integrity of thepatterns during etching of trenches 202 formed in the substrate 201. Insome embodiments, the mask layer 205 is used as a planarization stoplayer during the removal of excess dielectric layer that fills thetrenches 202. In some embodiments, the mask layer 205 includes nitride.For example, the mask layer 205 is made of silicon nitride (SiN).However, other materials, such as SiON, silicon carbide, or acombination thereof, may also be used. The mask layer 205 may be formedby a process such as chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), or low pressure chemical vapordeposition (LPCVD). Alternatively, the mask layer 205 may be made of asilicon oxide and then converted to SiN by nitridation. The terms“trench” used herein may broadly cover any topographic features such as“opening,” “holes,” “channels,” “recesses,” “plugs,” etc., that aresuitable for isolation or providing a conductive path which extendhorizontally and/or vertically within the structure.

In some embodiments, a protective layer 203 is formed over the topsurface of the substrate 201 and between the mask layer 205 and thesubstrate 201. The protective layer 203 protects the top surface fromdirect contact with the mask layer 205. For example, for a portion ofthe substrate 201 next to the trench 202, the protective layer 203 canprotect regions formed in the portion of the substrate 201. In someembodiments, the protective layer 203 is made of a thermal oxide. Onceformed, the mask layer 205 and the protective layer 203 are patternedthrough suitable photolithographic and etching processes to formopenings over the top surface of the substrate 201 for the trenches 202.

The exposed portions of the substrate 201 through the openings of themask layer 205 and the protective layer 203 are removed by an etchingprocess, such as reactive ion etching (RIE), in order to form thetrenches 202 in the substrate 201. An aspect ratio, the depth of thetrench 202 (sometimes referred to herein as trench height) divided bythe width of the trench 202, can be greater than about 7. In some otherembodiments, the aspect ratio may even be greater than about 8, althoughit may also be lower than about 7, or between 7 and 8. One skilled inthe art will realize, however, that the dimensions and values recitedthroughout the descriptions are merely examples, and may be changed tosuit different scales of semiconductor devices.

In some embodiments, the trenches 202 are configured to separateadjacent two fin structure 213 formed on the substrate 201. In otherwords, one of the fin structures 213 is disposed between adjacent two ofthe trenches 202. In some embodiments, the fin structures 213 areseparated from each other by a pitch P₁ in a range from about 12 toabout 50 nm, and at least one of the fin structures 213 has a width W₁in a range from about 4 to about 8 nm.

A bottom liner 207 is conformally formed over the mask layer 205 and inthe trenches 202, and a top liner 208 is conformally formed over thebottom liner 207. The bottom liner 207 may be made of silicon nitride(SiN). However, other materials, such as SiON, silicon carbide, or acombination thereof, may also be used. The top liner 208 may be made ofsilicon oxide or other suitable materials.

A dielectric material is formed over the top liner 208 and overfills thetrenches 202 to form a dielectric structure 209. The dielectricstructure 209 can be formed by using a spin on dielectric (SOD)formation process, or by depositing a flowable dielectric by a chemicalvapor deposition (CVD) process, such as radical-component CVD. In someembodiments, the dielectric structure 209 can be formed using, forexample, flowable chemical vapor deposition (FCVD), and performing achemical mechanical polish (CMP) to level the top surface of thedielectric material with the top surface of the bottom liner 207.Therefore, the bottom liner 207 is exposed from the dielectric structure209.

Turning now to FIGS. 4A to 4C, the fin structures 213 are exposed byrecessing the dielectric structure 209, the bottom liner 207, and thetop liner 208. Specifically, in FIG. 4A, the mask layers 205 and theprotection layers 203 of FIGS. 3A to 3C are removed, and then thedielectric structure 209, the bottom liner 207, and the top liner 208are recessed such that upper regions of the fin structures 213 areexposed. That is, sidewalls 214 and top surfaces of the upper regions ofthe fin structures 213 are exposed. The dielectric structure 209, thebottom liner 207, and the top liner 208 may be recessed by suitablemethods, such as an etching process. As shown in FIG. 4B, the upperregions of the fin structures 213 are not covered by the bottom liner207 and the top liner 208. The dielectric structure 209 is disposedbetween lower regions of the fin structures 213 such that the upperregions may be exposed for the subsequent processes. In someembodiments, at least one of the upper regions of the fin structures 213has a height H₁ in a range from about 30 to about 100 nm. In FIG. 4C,the bottom liner 207 and the top liner 208 above the top surface of thefin structure 213 has been removed at this stage.

Referring to FIGS. 5A to 5C, passivation layers 215 are respectivelyformed on the fin structures 213 (operation 103 of FIG. 1).Specifically, a passivation material is conformally deposited over thedielectric structures 209 and the fin structures 213. Subsequently, thepassivation material is partially removed to form the passivation layers215 respectively cover the upper portions of the fin structures 213.That is, after partially removing the passivation material, thepassivation layers 215 are formed independently on the fin structures213 such that the dielectric structure 209 is not covered by thepassivation layers 215. The passivation layer 215 extends along thesidewalls 214 and the top surface of the fin structures 213 and is incontact with the bottom liner 207 in some embodiments. As shown in FIG.5C, the passivation layer 215 is formed on the top surface of the finstructure 213. In some embodiments, the passivation layer 215 is made ofan insulating material, such as a two-dimensional (2D) material (e.g.,boron nitride or other suitable 2D materials). 2D materials arecrystalline materials made from a single layer of atoms. Example of 2Dmaterials may include, but are not limited to transition metaldichalcogenides (TMDs) having the formula MX₂, in which M may be Mo orW, and X may be S, Se or Te. Other examples of 2D materials may include,but are not limited to black phosphorus (BP), metal carbides (e.g., Ti₂Cand Ti₂CF₂) and the like. In some embodiments, the passivation layer 215having boron nitride is deposited using plasma-enhanced atomic layerdeposition (PE-ALD), such as Tris (ethylmethylamino) borane (TEMAB,C₉H₂₄BN₃) and/or NH₃/N₂ plasma, at a temperature ranging from about 250°C. to about 300° C., and has a thickness in a range from about 1 toabout 5 nm. The boron nitride used herein as the passivation layer 215also has an insulating property. In some embodiments, the passivationlayer 215 is deposited using chemical vapor deposition (CVD).

In some embodiments, the passivation layer 215 may be made of boronnitride. The passivation layer 215 having boron nitride can help preventadditional scattering of the subsequent material to be formed onassociated with the low surface phonon energy and large trap density,thereby improving both of device properties and uniformity across thewafer. The passivation layer 215 having boron nitride, morespecifically, provides a smooth surface that is relatively free ofdangling bonds and charge traps, and the different on-site energies ofthe boron and nitrogen atoms provide a good match of the latticeconstant with other 2D materials (e.g., merely about 1.7% mismatch withgraphite), and a large electrical band gap (e.g., about 6 eV).

Referring to FIGS. 6A to 6C, channel layers 217 are respectively formedon the passivation layer 215 and over the fin structures 213 (operation105 of FIG. 1). Specifically, a channel material is conformallydeposited over the isolation structures 207 and the passivation layers215. Subsequently, the channel material is partially removed to form thechannel layers 217 respectively on the passivation layers 215. That is,after partially removing the channel material, the channel layers 217are formed independently over the passivation layers 215 such that thedielectric structure 209 is not covered by the channel layers 217. Thechannel layer 217 over the passivation layer 215 extends along sidewallsand a top surface of the passivation layer 215.

As shown in FIG. 6C, the channel layer 217 is formed on the passivationlayer 215 over the fin structure 213. In some embodiments, the channellayer 217 is made of a 2D conductive material, such as TMDs, BP, metalcarbides, or other suitable materials. In some embodiments, thepassivation layer 215 and the channel layer 217 are made of 2D materialsdifferent from each other. For example, the channel layer 217 (e.g.MoS₂, conductive) is deposited on the passivation layer 215 (e.g. BN,insulating) using Atmospheric Pressure CVD (AP-CVD). During the AP-CVDusing argon (Ar) as the carrier gas, sulfur (S) is introduced by heatingto about 180° C., molybdenum trioxide (MoO₃) is introduced by heating toabout 300° C. and the wafer is introduced by heating to about 800° C. Insome embodiments, the channel layer 217 has a thickness in a range fromabout 1 to about 5 nm. In some embodiments, the channel layer 217 can beformed using other suitable deposition method such as, for example, ALD,or PE-CVD. In some embodiments, the channel layer 217 may be monolayerthat has a thickness smaller than 1 nm. In some embodiments, the channellayer 217 may include multiple layers that have a combined thicknesssmaller than 1 nm.

In some embodiments, due to lack of dangling bonds (which serve asnucleation sites for the materials to be uniformly deposited using ALDor the like) on the 2D material's basal plane, an activated surface isdesired. Therefore, a surface treatment is performed on the channellayer 217 having a 2D material before the formation of the gatedielectric layer. In some embodiments, the surface treatment may be, forexample, oxygen plasma treatment, UV-O₃ treatment, utilization of metaloxide seed layer(s), or combinations thereof. For example, at least onemetal oxide layer 218 is formed on the channel layer 217 by performingthe metal oxide seed layer(s) utilization.

It is noted that the passivation layers 215 and the channel layers 217are separately patterned in FIGS. 5A to 6C. That is, the channel layers217 are patterned after than passivation layers 215 are patterned. Insome other embodiments, however, passivation materials and channelmaterials can be sequentially formed, and the passivation materials andthe channel materials are then patterned in the same process to form thepassivation layers 215 and the channel layers 217.

Referring to FIGS. 7A to 7C, a dielectric layer 219 is formed on thechannel layer 217 (operation 107 of FIG. 1), specifically, on a surfaceof the channel layer 217 or the metal oxide layer 218 after the surfacetreatment. A precursor material is introduced to the channel layers 217.The precursor material is doped with impurities to form the dielectriclayer 219. As shown in 7A and 7B, the dielectric layer 219 continuouslycovers the isolation structure 207 and sidewalls and top surfaces of thechannel layer 217 across the fin structures 213. Since the surfacetreatment described above is performed on the channel layer 217, thedielectric layer 219 can be uniformly formed over the channel layer 217.In some embodiments, the dielectric layer 219 is in-situ doped withsemiconductor material (e.g. Si) or metal elements (e.g. Zr, Al, La, Y,Gd, Sr) during ALD growth on the channel layer 217 after the surfacetreatment. For example, in-situ doping for Zr-doped HfO₂ may involves areaction between (HfCl₄+H₂O) and (ZrCl₄+H₂O) using nanolaminate ALD percycle at about 300° C. In some embodiments, the dielectric layer 219having HfO₂ is doped with Si ranging from about 2 to about 6 molarpercentage (mol %). In some other embodiments, the dielectric layer 219having HfO₂ is doped with Zr in a ratio of Hf:Zr=1:1. In yet some otherembodiments, the dielectric layer 219 having HfO₂ is doped with Alranging from about 7 to 11 mol %. As shown in FIG. 7C, the dielectriclayer 219 is formed on the top surface of the channel layer 217 over thepassivation layer 215. In some embodiments, the dielectric layer 219 hasa thickness in a range about 1 to about 5 nm. The crystal structure ofthe dielectric layer 219 at this stage is amorphous.

Referring to FIGS. 8A to 8C, a cap layer 221 is conformally formed overthe dielectric layer 219 (operation 109 of FIG. 1). In FIGS. 8A and 8B,the cap layer 221 continuously covers along bottom surfaces, sidewallsand top surfaces of the dielectric layer 219 across the fin structures213. As shown in FIG. 8C, the cap layer 221 is formed on the top surfaceof the dielectric layer 219. In some embodiments, the cap layer 221 maybe deposited by ALD. The cap layer 221 may include a single layer or amultilayered structure and at least one of the layers has a thickness ina range from about 1 to about 5 nm. For example, the cap layer 221includes a capping metal layer on the dielectric layer 219, a barriermetal layer on the capping metal layer, and a work function metal layeron the barrier metal layer. In some embodiments, the capping metal layeris made of TiN or TSN, the barrier metal layer is made of TaN, and thework function metal can be P work function metal (e.g., TiN) or N workfunction metal (e.g., TiAl or TaAl). In some other embodiments, the caplayer 221 may further include a glue layer made of TiN.

Referring to FIGS. 9A to 9C, an annealing process 10 is performed(operation 112 of FIG. 1) on the dielectric layer 219 (see FIGS. 8A to8C) and the cap layer 221. As described above, the crystal structure ofthe dielectric layer 219 is amorphous as shown in FIGS. 7A to 7C.Transition from the amorphous phase of the dielectric layer 219 to theorthorhombic phase of a ferroelectric layer 219′ is desired for goodferroelectric properties. In the annealing process 10, a suitabletemperature provides the driving force for crystalline transition of thedielectric layer 219 from the amorphous phase to the high temperaturetetragonal phase (a=b≠c, α=β=γ=90°), and then the cap layer 221 providesthe mechanical stress for the dielectric layer 219 transition from thetetragonal phase to the high pressure ferroelectric orthorhombic phase(a≠b≠c, α=β=γ=90°) during cooling. During the cooling stage, the caplayer 221 with capping metal layer that in contact with the dielectriclayer 219 may help increase intrinsic polarization generated by 4 oxygenions displacement. After the annealing process 10, the dielectric layer219 is transformed to the ferroelectric layer 219′. In some embodiments,the annealing process 10 is performed at a temperature about 600° C. toabout 1000° C. under atmospheric pressure in N₂ environment. In someembodiments, the annealing process 10 is a spike anneal for a durationof about 30 seconds. In addition, while the annealing process 10discussed herein is carried out before metallization (i.e., post-capanneal, PCA), it is contemplated that the annealing process 10 may becarried out after metallization (i.e., post-metal anneal, PMA).

Referring to FIGS. 10A to 10D, a semiconductor gate is formed over thecap layer 221, and at least one gate stack 227 including thesemiconductor gate layer 223, the cap layer 221, and the ferroelectriclayer 219′ is formed on the fin structures 213 (operation 115 andoperation 118 of FIG. 1). A semiconductor material layer, such as apolysilicon layer, is deposited over the cap layer 221. A hardmaskmaterial layer is deposited over the semiconductor material layer. Next,for forming the gate stacks 227, a patterning process, including such asa photolithographic process, is performed on the semiconductor materiallayer, the cap layer 221, and the ferroelectric layer 219′. Thephotolithography process includes coating the hardmask material layerwith a photoresist, selectively exposing the photoresist according to adesired pattern, developing the photoresist, and using the patternedphotoresist as an etch mask. An etching process is then performed to thehardmask material layer upon which the patterned photoresist isutilized, thereby forming a patterned hardmask layer 225. Subsequently,an etching process is performed to the semiconductor material layer uponwhich the patterned hardmask layer 225 is utilized, thereby forming apatterned semiconductor gate layer 223. Then, portions of the cap layer221 and the ferroelectric layer 219′ are removed by, for example,etching, to define the gate stacks 227. At least one of the gate stacks227 includes the ferroelectric layer 219′, the cap layer 221 and thesemiconductor gate layer 223. As shown in FIG. 10B, a portion of thedielectric structure 209 between two fin structures 213 is exposed afterthe semiconductor gate patterning process. The hardmask layer 225, thesemiconductor gate layer 223, the cap layer 221 and the ferroelectriclayer 219′ has been etched to expose the portion of the dielectricstructure 209. In some embodiments, a portion of the dielectricstructure 209 between the adjacent fin structures 213 is exposed afterthe polysilicon gate patterning process. In some embodiments, finstructures 213 independently surrounded with the hardmask layer 225, thegate stack 227, the channel layer 217 and the passivation layer 215 areseparated from each other by a space created from the removed portion ofthe ferroelectric layer 219′, the cap layer 221, the semiconductor gatelayer 223 and the hardmask layer 225.

In FIG. 10C, the channel layer 217 between the gate stacks 227 on eachof the fin structures 213 are exposed after the semiconductor gatepatterning process. Also, the dielectric structure 209 between the finstructures 213 is exposed. In FIG. 10D, the channel layer 217 betweenthe gate stacks 227 are exposed after the semiconductor gate patterningprocess. The hardmask layer 225, the semiconductor gate layer 223, thecap layer 221 and the ferroelectric layer 219′ are removed between thegate stacks 227 respectively on the fin structures 213, and thus thegate stacks 227 are separated from each other by a space.

It is understood that four fin structures 213 and twelve gate stacks 227are shown for illustration purposes. The fin structures and gatestructures may be in any numbers depending on the application. Inaddition, while the gate stacks 227 discussed herein are fabricatedusing a gate-first process, it is contemplated that the gate stacks 227may be fabricated using a gate-last process.

Referring to FIGS. 11A to 11D, a spacer layer 229 a is formed over thegate stacks 227 and the dielectric structure 209. The method of formingthe spacer layer 229 a includes blanket forming a spacer material layeron the structure shown in FIG. 10A by, for example, performing an ALDprocess. In some embodiments, the spacer layer 229 a may include asingle layer or multilayer structure made of different dielectricmaterials. In some embodiments, the spacer layer 229 a is made of SiN.

Turning now to FIGS. 12A to 12D, the spacer layer 229 a of FIGS. 11A to11D is partially removed to expose the passivation layer 215 (as shownin FIGS. 12C and 12D). For example, an etching process is performed tothe spacer layer 229 a to form first spacers 229 b. In FIGS. 12A and12B, a top surface of the hardmask layer 225 is exposed after theetching process. The top surface of the hardmask layer 225 issubstantially coplanar with a top surface of the first spacers 229 b.The gate stacks 227 are electrically separated from each other by thefirst spacers 229 b. In FIG. 12C, sidewalls of the spacer layer 229 abetween the fin structures 213 may be pullback-etched. The first spacers229 b remain at corners between the dielectric structure 209 and thechannel layer 217 on the opposing sides of the upper region of the finstructures 213 after the etching. For the subsequent process to bediscussed in FIGS. 13A to 13D, a portion of the channel layer 217 overthe fin structure 213 is also removed to expose the passivation layer215 below. FIG. 12D further illustrates the passivation layer 215 isexposed between the gate stacks 227 flanked by the first spacers 229 b.Sidewalls 235 of the channel layer 217 over the passivation layer 215between the gate stacks 227 are also exposed after the etching process.The sidewall 235 of the channel layer 217 is substantially coplanar witha sidewall of the first spacer 229 b. In some embodiments, the etchingprocess may include dry etching, wet etching, and/or other suitableetching methods.

Referring to FIGS. 13A to 13D, a source/drain metal layer 233 a isblanket formed over the first spacers 229 b. The source/drain metallayer 233 a is formed over the fin structures 213 between the gatestacks 227, and directly covers the exposed passivation layer 215 wherethe portion of the channel layer 217 is removed in FIGS. 12A to 12D. InFIG. 13B, the source/drain metal layer 233 a is disposed on the firstspacers 229 b and the hardmask layer 225. In FIG. 13C, the source/drainmetal layer 233 a continuously extends along the Y-axis directioncovering the isolation structure 207, the first spacers 229 b, thechannel layer 217 and the passivation layer 215 across the finstructures 213. That is, the source/drain metal layer 233 a is incontact with the channel layer 217 uncovered by the gate stacks 227 (seeFIG. 13A). FIG. 13D further illustrates the source/drain metal layer 233a also continuously extends along the X-axis direction across the gatestacks 227. The source/drain metal layer 233 a is also in contact withthe portion of the channel layer 217 covered by the gate stacks 227. Thesource/drain metal layer 233 a is further in contact with the exposedpassivation layer 215. In some embodiments, the source/drain metal layer233 a can be deposited using, for example, ALD, CVD, PVD, or othersuitable deposition methods. In some embodiments, the source/drain metallayer 233 a has a thickness in a range from about 1 to about 5 nm. Insome embodiment, the source/drain metal layer 233 a includes Au, Ti, Pt,Al, Pt, Ni, Sc, Ir, or combinations thereof. Different types of thechannel layer 217 that includes the 2D material may be suitable forcorrespondingly different contact metals, depending on the applications.For example, Ti or Sc is utilized as the source/drain metal layer 233 ain N-type field-effect transistors (FET). In some embodiments, Ni or Ptis utilized as the source/drain metal layer 233 a in P-type FET. Theprocess concepts described above can be integrated into the present FinFET fabrication process, and can be implemented in a number oftechnology nodes.

Referring to FIGS. 14A to 14D, a first interlayer dielectric (ILD) layer239 is formed over the source/drain metal layer 233 a. In FIG. 14A, thefirst ILD layer 239 is disposed over and in contact with thesource/drain metal layer 233 a. As shown in FIGS. 14C and 14D, the firstILD layer 239 adheres to the source/drain metal layer 233 a across thefin structures 213 and the gate stacks 227. Recesses between the upperregions of the fin structures 213 and recesses between the gate stacks227 over the fin structures 213 may be filled with the first ILD layer239. In some embodiments, the first ILD layer 239 may be an oxide suchas, for example, silicon dioxide (SiO₂), silicon nitride (SiN),tetraethoxysilane (TEOS), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), low-k dielectric material, or othersuitable dielectric materials.

Referring now to FIGS. 15A to 15D, a planarization process is performedto the first ILD layer 239. For example, a CMP process may be used toremove excessive portions of the first ILD layer 239 and the hardmasklayer 225 over the gate stacks 227 to expose the gate stacks 227. Thefirst spacers 229 b and the source/drain metal layer 233 a of FIGS. 14Ato 14D have been leveled down to form second spacers 229 c andsource/drain layers 233 b, respectively. In some embodiments, the CMPprocess is performed to remove the hardmask layer 225 from an uppersurface of the semiconductor gate layer 223, as shown in FIG. 15B. InFIG. 15C, the first ILD layer 239 interposed between the gate stacks 227has been leveled down and has a substantially flat upper surface overthe source/drain layers 233 b. FIG. 15D further illustrates a profile ofthe source/drain layers 233 b. After the planarization process, an uppersurface of the planarized first ILD layer 239, an upper surface of thesource/drain layers 233 b, an upper surface of the second spacers 229 c,and the upper surface of the semiconductor gate layer 223 aresubstantially coplanar. The source/drain layer 233 b has a U-shapedprofile along sidewalls of the second spacers 229 c, the sidewalls 235of the channel layer 217 and the top surface of the passivation layer215 such that the sidewalls 235 of the channel layer 217 and the topsurface of the passivation layer 215 are in contact with thesource/drain layers 233 b, and the planarized first ILD layer 239 ispartially wrapped by the source/drain layers 233 b. In some embodiments,the source/drain layers 233 b may be formed with various profiles, suchas, for example, when the sidewalls 235 of the channel layer 217 extendhorizontally (i.e., in the X-axis direction) along the top surface ofthe passivation layer 215 beyond the sidewalls of the second spacers 229c. In some embodiments, at least one of the sidewalls 235 of the channellayer 217 is not coplanar with each of the sidewalls of the secondspacers 229 c, that is, the sidewalls 235 of the channel layer 217protrude beyond the sidewalls of the second spacers 229 c and thus thechannel layer 217 may provide more contact area with the source/drainlayers 233 b.

Referring now to FIGS. 16A to 16D, a second ILD layer 241 is formed overthe structure of FIGS. 15A to 15D (i.e., over the source/drain layers233 b, the first ILD 239, and the gate stacks 227). The second ILD layer241 may help electrically insulate the source/drain layers 233 b fromthe contacts that is for the subsequent desired contact design. In FIG.16B, the second ILD layer 241 is disposed over the second spacers 229 cand the semiconductor gate layer 223. The second ILD layer 241 has asubstantially flat bottom surface coplanar with the upper surface of thesecond spacers 229 c and the upper surface of the semiconductor gatelayer 223 due to aforementioned planarization process. In FIG. 16C, thesecond ILD layer 241 is formed on and has the substantially flat bottomsurface coplanar with a top surface of the first ILD layer 239. In FIG.16D further illustrates the second ILD layer 241 extends along theX-axis direction across the gate stacks 227. The second ILD layer 241covers the upper surface of the source/drain layers 233 b, the uppersurface of the second spacers 229 c, and the upper surface of thesemiconductor gate layer 223. In some embodiments, the second ILD layer241 is made of an oxide different from the first ILD layer 239.

Referring to FIGS. 17A to 17D, a contact etch stop layer (CESL) 243 isformed on the second ILD layer 241. The CESL 243 can be formed using,for example, plasma enhanced CVD, low pressure CVD, ALD or othersuitable techniques. In some embodiments, the CESL 243 includes siliconnitride, silicon oxynitride or other suitable materials. In someembodiments, the CESL 243 may include a material different from thesecond ILD layer 241.

Referring to FIGS. 18A to 18D, via openings 245 are formed. The viaopenings 245 may be alternately arranged on the opposing sides of thegate stacks 227. The via openings 245 are formed to expose thesource/drain layers 233 b, as illustrated in FIG. 18C. In someembodiments, the via openings 245 has an upper region over the finstructures 213 and a lower region between two adjacent fin structures213. The upper region of the via openings 245 is wider than the lowerregion of the via openings 245 such that the via opening 245 has aprofile tapered down from a top surface of the CESL 243 toward theisolation structure 207. In some embodiments, the via openings 245 maybe formed with various profiles different from each other. In FIG. 18Dfurther illustrates the via openings 245 are formed adjacent to the gatestack 227. The via openings 245 expose the source/drain layers 233 bwhere the passivation layer 215 and the sidewalls 235 of the channellayer 217 are in contact with the source/drain layers 233 b.

Referring to FIGS. 19A to 19D, a filling metal layer 249 a fills in thevia openings 245 over the CESL 243. In some embodiments, before fillingthe filling metal layer 249 a, a metal glue layer 247 is deposited overthe surface of the source/drain layers 233 b. The metal glue layer 247can improve adhesion between the source/drain layers 233 b and thefilling metal layer 249 a. As shown in FIGS. 19C and 19D, the metal gluelayer 247 fills a portion of the via openings 245 over the source/drainlayers 233 b prior to the filling metal layer 249 a, and the metal gluelayer 247 has a top surface over the top surface of the CESL 243.Subsequently, the filling metal layer 249 a fills the remaining portionof the via openings 245 and is formed over the top surface of the metalglue layer 247. As shown in FIGS. 19C and 19D, a relatively large partof the metal glue layer 247 fills in the lower region of the viaopenings 245 covering the surfaces of the source/drain layers 233 b andthus enhances adhesion between the source/drain layers 233 b and thefilling metal layer 249 a. The filling metal layer 249 a is depositedover the metal glue layer 247 and electrically connected to thesource/drain layers 233 b. In some embodiments, the metal glue layer 247may include one or more layers of a material such as, for example,titanium, titanium nitride, titanium tungsten or combinations thereof.In some embodiments, the filling metal layer 249 a may be made of, forexample, tungsten (W).

Referring to FIGS. 20A to 20D, a planarization process is performed tothe filling metal layer 249 a and the metal glue layer 247 of FIGS. 19Ato 19D. Excessive filling metal layer 249 a and the metal glue layer 247on the top surface of the CESL 243 can be removed via suitable processessuch as CMP, thereby forming contact plugs 249 b adhered andelectrically connected to the source/drain layers 233 b with the metalglue layer 247.

FIG. 21 is an enlarged view of area M of FIG. 20D and FIG. 22 is anenlarged view of area N of FIG. 20C. As shown in FIG. 21, thesemiconductor device includes the fin structure 213, the passivationlayer 215, the channel layer 217, and the gate stack 227. The finstructure 213 is extended from the semiconductor substrate 201 (see FIG.20A). The passivation layer 215 is formed on the fin structure 213. Thechannel layer 217 is formed on the passivation layer 215. In addition,the sidewalls 235 of the channel layer 217 are on the opposing sides ofthe gate stack 227 such that the channel layer 217 partially covers thetop surface of the passivation layer 215 and partially cover the finstructure 213. Therefore, the source/drain layers 233 b are in directcontact with the channel layer 217 and the passivation layer 215.Moreover, the source/drain layers 233 b are physically and electricallyisolated from the fin structure 213. In some embodiments, thepassivation layer 215 and the channel layer 217 are made of different 2Dmaterials. For example, the passivation layer 215 is made of boronnitride and the channel layer 217 is made of TMDs, BP or metal carbides.

The gate stack 227 is disposed on the channel layer 217. The gate stack227 includes the ferroelectric layer 219′, the cap layer 221 and thesemiconductor gate layer 223. The ferroelectric layer 219′ is formedover and in contact with the channel layer 217, the cap layer 221 isformed over the ferroelectric layer 219′, and the semiconductor gatelayer 223 is formed over the cap layer 221. In addition, the gate stack227 may be further flanked by a pair of the second spacers 229 c overthe channel layer 217. A bottom surface of the second spacer 229 c issubstantially coplanar with a bottom surface of the gate stack 227 andthe top surface of the channel layer 217. Further, the contact plugs 249b attach on the source/drain layers 233 b with help of the metal gluelayer 247 and thus are electrically connected to the source/drain layers233 b, as shown in FIGS. 21 and 22. It is understood that the contactdesign over two fin structures 213 is shown in FIG. 22 for illustrationpurposes. The metal contact area may be various depending on theapplication.

The fabrication processes described above integrate ferroelectricdielectrics, 2D materials and the gate-first process into a FinFETtransistor. The ferroelectric dielectrics used in negative-capacitance(NC) technology provide a feasible solution to lower V_(DD)significantly and achieve steep subthreshold swing (SS) for low poweroperation. The 2D materials may be used as materials of channel and/orpassivation layer underneath the channel. The gate-first processintegrated in the present disclosure offers a low thermal budget (forexample, no S/D activation annealing). 2D material is atomically thin,flat, no dangling bond of the surface, and layered structure which iswith ease of integration in a junctionless transistor. Compared withbulk silicon and ultra thin body (UTB) FETs, 2D materials can achievehigher voltage amplification in NC-FET structure since they can reachlarger capacitance C_(dep) due to limited depletion region width comingfrom atomically thin structures.

In some embodiments, a method of fabricating a semiconductor devicecomprises forming a fin structure on a substrate, forming a channellayer on a sidewall and a top surface of the fin structure, and forminga gate stack over the channel layer. The channel layer includes atwo-dimensional (2D) material. The gate stack includes a ferroelectriclayer.

In some embodiments, a method of fabricating a semiconductor devicecomprises forming a fin structure on a substrate, forming a dielectricstructure around a lower part of the fin structure, forming a channellayer across an upper part of the fin structure, and forming a gatestack on the channel layer. The channel layer includes a two-dimensional(2D) material. The gate stack includes a ferroelectric layer in contactwith the dielectric structure.

In some embodiments, a method of fabricating a semiconductor devicecomprises forming a passivation layer across a fin structure extendingfrom a substrate, forming a channel layer over the passivation layer,and forming a gate stack over the channel layer. The channel layerincludes a two-dimensional (2D) material. The gate stack includes aferroelectric layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of fabricating a semiconductor device,the method comprising: forming a fin structure on a substrate; forming achannel layer on a sidewall and a top surface of the fin structure,wherein the channel layer includes a two-dimensional (2D) material; andforming a gate stack over the channel layer, wherein the gate stackincludes a ferroelectric layer.
 2. The method of claim 1, furthercomprising performing a surface treatment on the channel layer beforeforming the gate stack.
 3. The method of claim 1, wherein forming thegate stack comprises: forming a dielectric layer over the fin structure;and annealing the dielectric layer to form the ferroelectric layer. 4.The method of claim 3, further comprising forming a cap layer over thedielectric layer before annealing the dielectric layer.
 5. The method ofclaim 1, wherein forming the gate stack comprises: forming a dielectriclayer over the fin structure; doping the dielectric layer with asemiconductor material; and converting the doped dielectric layer intothe ferroelectric layer.
 6. The method of claim 1, wherein forming thegate stack comprises: forming a dielectric layer over the fin structure;doping the dielectric layer with metal; and converting the dopeddielectric layer into the ferroelectric layer.
 7. The method of claim 1,further comprising; forming a spacer on a sidewall of the gate stack anda top surface of the channel layer.
 8. The method of claim 7, furthercomprising; forming a source/drain metal layer on the spacer.
 9. Themethod of claim 8, further comprising performing a chemical mechanicalpolish (CMP) process to level the source/drain metal layer with thespacer.
 10. A method of fabricating a semiconductor device, the methodcomprising: forming a fin structure on a substrate; forming a dielectricstructure around a lower part of the fin structure; forming a channellayer across an upper part of the fin structure, wherein the channellayer includes a two-dimensional (2D) material; and forming a gate stackon the channel layer, wherein the gate stack includes a ferroelectriclayer in contact with the dielectric structure.
 11. The method of claim10, further comprising forming a passivation layer across the upper partof the fin structure before forming the channel layer.
 12. The method ofclaim 11, wherein the passivation layer includes a 2D material.
 13. Themethod of claim 11, further comprising forming a bottom liner around thelower part of the fin structure before forming the dielectric structure.14. The method of claim 13, further comprising forming a top lineraround the lower part of the fin structure after forming the bottomliner and before forming the dielectric structure.
 15. The method ofclaim 14, wherein forming the gate stack is performed such that theferroelectric layer is in contact with the top liner.
 16. A method offabricating a semiconductor device, the method comprising: forming apassivation layer across a fin structure extending from a substrate;forming a channel layer over the passivation layer, wherein the channellayer includes a two-dimensional (2D) material; and forming a gate stackover the channel layer, wherein the gate stack includes a ferroelectriclayer.
 17. The method of claim 16, further comprising: forming a spaceralongside the gate stack; depositing a source/drain metal layer over thespacer; depositing an interlayer dielectric layer over the source/drainmetal layer; and performing a chemical mechanical polish (CMP) processon the interlayer dielectric layer at least until the spacer, the gatestack and the source/drain metal layer are exposed.
 18. The method ofclaim 16, further comprising: depositing a spacer layer on a sidewalland a top surface of the gate stack and a top surface of the channellayer; and removing the spacer layer from the top surface of the gatestack and the top surface of the channel layer using an etching process,while leaving a portion of the spacer layer on the sidewall of the gatestack.
 19. The method of claim 18, further comprising: after the etchingprocess, depositing a source/drain metal layer on the channel layer;forming an interlayer dielectric layer over the source/drain metallayer; etching the interlayer dielectric layer to form a via openingthat exposes the source/drain metal layer; and forming a metal gluelayer in the via opening in the interlayer dielectric layer.
 20. Themethod of claim 16, wherein forming the ferroelectric layer comprisesdepositing a dielectric layer on the channel layer, and activatingcrystalline transition from an amorphous phase of the dielectric layerinto an orthorhombic phase.